Gallium arsenide (GaAs) is a compound semiconductor composed of the elements gallium (Ga) and arsenic (As). It is a III-V semiconductor, meaning it belongs to Group III (or Group 13) and Group V (or Group 15) of the periodic table.
(GaAs) has a crystalline structure and is known for its unique electrical and optical properties. It is a direct band gap semiconductor, which means that it can efficiently emit and absorb light. This property makes GaAs well-suited for optoelectronic applications such as lasers, photodetectors, and solar cells.
